MTTVSASOT233L712 – SM712 TVS Diode
- Order Code - MTTVSASOT233L712
- SOT23-3L package
- 400 W Peak Pulse Power (tp = 8/20 µs)
- Low leakage current
- Low clamping voltage Solid-state silicon avalanche technology
- Operating temperature: –40 ºC to +125 ºC
- Security systems
- HFC systems
- Networks
- Protection of RS-485 transceivers with extended common-mode range
Description
MTTVSASOT233L712 TVS arrays are designed to protect sensitive electronics from damage or latch-up due to ESD and other voltage-induced transient events. They are designed for use in applications where board space is at a premium. TVS diodes are solid-state devices designed specifically for transient suppression. They feature large cross-sectional area junctions for conducting high transient currents. They offer desirable characteristics for board level protection including fast response time, low operating and clamping voltage, and no device degradation.
MTTVSASOT233L712 devices may be used to meet the immunity requirements of IEC 61000-4-2, level 4. Generally used for High speed signal or data lines of portable electronics such as cell phones, PDA’s, notebook computers, and digital cameras.